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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4758 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *Low Saturation Voltage APPLICATIONS *Horizontal deflection output for high resolution display. *High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w w scs .i w 1500 V 600 V 5 V 8 A 16 A 4 A .cn mi e ICP Collector Current-Pulse IB B Base Current- Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC 50 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4758 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; IB= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 1.5 V ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance Switching times, Resistive load w w w. sem isc IC= 1A ; VCE= 5V IC= 6A ; VCE= 5V IC= 0.1A ; VCE= 10V .cn i 8 4 1 3 175 10 A 8 MHz IE=0 ; VCB=10V;ftest=1.0MHz pF tstg Storage Time IC= 6A , IB1= 1.2A ; IB2= -2.4A RL=32 2.5 s tf Fall Time 0.2 s isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4758 w w scs .i w .cn mi e isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4758 w w scs .i w .cn mi e isc Websitewww.iscsemi.cn 4 |
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